| PART |
Description |
Maker |
| TH58NVG1S3AFT TH58NVG1S3AFT05 |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash
|
Hynix Semiconductor
|
| 110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
800V 3 Phase Bridge in a INT-A-Pak package
THREE PHASE BRIDGE
CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式
3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB |
16Gbit (2Gx8bit) NAND Flash
2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
|
Hynix Semiconductor, Inc.
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| M74HC4078 M54HC4078 1971 M74HC4078B1R M74HC4078M1R |
12-Bit DAC Parallel Voltage Out Pgrmable Int Ref Settling Time, Pwr Consumption, 8-bit uC Comp Int 20-SOIC 0 to 70
8 INPUT NOR/OR GATE
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| IRKTF112 IRKLF112 2212 IRKTF112-08HNN IRKTF111-04H |
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 快速晶闸管/二极管和晶闸晶闸
INT-A-pak Power Modules(8V,112A,可控二极H结构INT-A-pak 功率模块) 相依甲柏功率模块V的，112A章，可控二极结构相依甲柏功率模块
INT-A-pak Power Modules(8V,112A,可控可控L结构INT-A-pak 功率模块)
INT-A-pak Power Modules(4V,112A,可控可控L结构INT-A-pak 功率模块)
Receptacle AA series 3 pin female PCB Vertical - no grd or latch
From old datasheet system
800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Negative Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
400V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F400 |
512K x 8 bit NAND Flash Memory
4M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CY7C68034-56LFXC CY7C68033-56LFXC |
EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller
|
Cypress Semiconductor Corp.
|
